Refractive Index of GaN, Gallium Nitride

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure.

For a typical sample of GaN the refractive index and extinction coefficient at 632.8 nm are 2.37966 and 0. Below are files of complete refractive index and extinction coefficients. If the file is not available for download, you can request our proprietary file by clicking "Request".

Refractive Index Reference - Optical constants of crystalline and amorphous semiconductors, Adachi, pg 183

No guarantee of accuracy - use at your own risk.

Tab-delimited data file for unrestricted use: